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| inchange semiconductor isc product specification isc silicon npn power transistor S2056 description high breakdown voltage- : v cbo = 1500v (min) high switching speed applications designed for tv horizontal output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v ces collector-emitter voltage v be = 0 1500 v v cer collector-emitter voltage r be = 100 1500 v v ceo collector-emitter voltage 700 v v ebo emitter-base voltage 5 v i c collector current 2.5 a i cm collector current-peak 3 a i b b base current 0.1 a p c collector power dissipation @ t c 90 10 w t j junction temperature 115 t stg storage temperature range -65~115 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor S2056 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.1a; l= 25mh 700 v v (br)ebo emitter-base breakdown voltage i e = 100ma; i c = 0 5 v v ce (sat) collector-emitter saturation voltage i c = 2a; i b = 1a b 5.0 v v be (sat) base-emitter saturation voltage i c = 2a; i b = 1a b 1.5 v i ces collector cutoff current v ce = 1500v; v be = 0 1.0 ma h fe dc current gain i c = 2a; v ce = 5v 2 c ob output capacitance i e = 0; v cb = 10v; f= 1mhz 95 pf f t current-gain?bandwidth product i c = 0.1a; v ce = 5v 3 mhz t f fall time i c = 2a; i b( end ) = 1a 0.75 s isc website www.iscsemi.cn |
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